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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2258
DESCRIPTION *With TO-126 package *High transition frequency fT *High collector-emitter voltage VCEO APPLICATIONS *For high breakdown voltage general amplification *For video output amplification
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE 250 250 7 0.1 0.15 1.2* PC Collector power dissipation TC=25 4* Tj Tstg Junction temperature Storage temperature
2 1
UNIT V V V A A
W
150 -55 +150
Note :*1: Without heat sink *2: With a 100 x 100 x 2 mm A1 heat sink
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2258
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector cutoff current Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS VCE=250V;RBE=100k= IE=0.1mA ;IC=0 IC=50mA ;IB=5m A IC=40mA ; VCE=20V IC=40mA ; VCE=20V IC=5mA ; VCE=50V IE=0; VCB=50V;f=1MHz IE=-10mA ; VCB=10V,f=200MHz 40 30 3 100 4.5 pF MHz 7 1.2 1.2 MIN TYP. MAX 100 UNIT A V V V
SYMBOL ICER V(BR)EBO VCEsat VBE hFE-1 hFE-2 COB fT
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2258
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2258
4


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